A 10Gb/s Optical Random-Access Memory using a saturated SOA-MZI fast Access Gate and a monolithic InP Flip-Flop

A. Tsakyridis, C. Vagionas, Th. Alexoudi, A. Miliou, and N. Pleros

Abstract

We experimentally demonstrate an all-optical static Random-Access Memory (RAM) cell using a monolithic integrated InP Flip-Flop and a fast strongly-saturated push-pull SOA-MZI Access-Gate, reporting 10Gb/s error-free Write/Read operation and the fastest RAM cell to date.

© 2019 The Author(s)

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